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CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CMPD6001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for switching applications requiring a extremely low leakage diode. The following configurations are available:
SOT-23 CASE
CMPD6001 CMPD6001A CMPD6001C CMPD6001S MAXIMUM RATINGS:
SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES (TA=25C)
MARKING MARKING MARKING MARKING
CODE: CODE: CODE: CODE:
ULO ULA ULC ULS
Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 sec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ,Tstg JA
75 100 250 250 4000 1000 350 -65 to +150 357
UNITS V V mA mA mA mA mW C C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL IR VBR VF VF VF CT trr TEST CONDITIONS VR=75V IR=100A IF=1.0mA IF=10mA IF=100mA VR=0, f =1.0 MHz IR=IF=10mA, RL=100, Rec. to 1.0mA MIN 100 0.85 0.95 1.1 2.0 3.0 MAX 500 UNITS pA V V V V pF s
R1 ( 01-Mar 2001)
Central
TM
Semiconductor Corp.
CMPD6001 CMPD6001A CMPD6001C CMPD6001S SURFACE MOUNT LOW LEAKAGE SWITCHING DIODE
SOT-23 CASE - MECHANICAL OUTLINE
Pin Configuration
N.C. A C1 C2 A1 A2 C1 A2
C CMPD6001
A1, A2 CMPD6001A
C1, C2 CMPD6001C
A1, C2 CMPD6001S R1 ( 01-Mar 2001)

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